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| 國立交通大學 |
2015-12-02T02:59:29Z |
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
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Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2014-12-08T15:31:35Z |
Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme
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Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro |
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